Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs

In this paper, carrier transport mechanism of MOSFETs with HfLaSiON was analyzed. It was shown that gate current is consisted of Schottky emission, Frenkel-Poole (F-P) emission and Fowler-Nordheim (F-N) tunneling components. Schottky barrier height is calculated to be 0.829eV from Schottky emission model. Fowler-Nordheim tunneling barrier height was 0.941eV at high electric field regions and the trap energy level extracted using Frenkel-Poole emission model was 0.907eV. From the deviation of weak temperature dependence for gate leakage current at low electric field region, TAT mechanism is also considered.