Pulsed-laser deposition of inclined ZnO, of GaPO4 and of novel composite thin films

Pulsed-laser deposition of different novel thin film materials is reported. Pure ZnO, Al-doped and Li-doped ZnO thin films and double-layers with inclined crystal orientation and very strong texture were achieved. The inclined ZnO heterostructures consisted of pure and doped layers of strongly different electrical resistivity. Polycrystalline GaPO4 thin films were grown by F2-laser ablation of ceramic GaPO4. Layers of a novel composite material were produced from BaTiO3/polytetrafluoroethylene mixed targets. The composite films revealed a giant dielectric permittivity, er’≤ 15000, and a strong dependence of permittivity on the thickness of the layers.