Electrical and optical properties of carbon implanted In2O3 thin film

Abstract Electrical and optical properties of In 2 O 3 thin film with carbon ion implantation have been studied. The location of the implanted carbon in the film was also investigated by means of a high-resolution electron microscope. Carbon ions were implanted into In 2 O 3 thin films with an energy of 30 keV at doses of 1×10 15 to 2×10 16 cm −2 . After implantation the films were annealed for 1 h in air and subsequently for 1 h in a vacuum. After the two step annealing at 350°C, the electrical resistivity achieved for a sample with an ion dose of 5×10 15 cm −2 was 5.4×10 −4 Ω cm with an optical transmittance of 82% at a wavelength of 550 nm.