Study of the Plasma Resistance of a High Resolution e-Beam Resist HSQ for Prototyping Nanoelectronic Devices

The selectivity of the reactive ion etching of functional materials included in the device structures of nanoelectronics with respect to the mask of a negative e-beam resist based on hydrogen-silsesquioxane (HSQ) is studied. The formation of nanostructures with sub-50-nm critical dimensions under the HSQ mask is studied for a number of materials: monocrystalline silicon, metallic Ta layers, dielectric SiO2 layers, Al2O3, HfO2, Si3N4, and low-k porous dielectric based on organosilicate glass (OSG) on silicon substrates. It is established that HSQ resist masks can be used to manufacture prototypes of micro- and nanoelectronic devices with topological dimensions up to 10 nanometers using a wide range of materials, including creating structures with relatively high aspect ratios with an absolute thickness of the layers of functional materials of tens of nanometers.