Effect of gas condition on graphene synthesized by rapid thermal chemical vapor deposition

Graphene was synthesized using rapid thermal chemical vapor deposition (RT-CVD) equipment designed to produce largeareagraphene at high speed. The effects of methane (CH4), argon (Ar), and hydrogen (H2) gases were investigated between800 oC and 1,000 oC during heating and cooling in the graphene synthesis process. The findings reveal that multilayer domainsincreased due to hydrogen pretreatment with increase in temperature. Furthermore, when pretreated with the same gas, it wasconfirmed that the post-argon-treated sample cooled from 1,000 oC to 800 oC had a higher ID/IG value than that of the othersamples. This result was consistent with the sheet resistance properties of graphene. The sample prepared in methaneatmosphere maintained during both the pre-treatment and post-treatment demonstrated the lowest sheet resistance of 787.49Ω/sq. Maintaining the methane gas atmosphere in the high-temperature region during graphene synthesis by RT-CVD reducedthe defects and improved the electrical property.