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Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices
Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices
2017
Shang-Shiun Chuang
Ta-Chun Cho
Po-Jung Sung
Kuo-Hsing Kao
Henry J. H. Chen
Yao-Jen Lee
Michael I. Current
Tseung-Yuen Tseng
Keywords:
Crystal
Monolayer
Doping
CMOS
Inorganic chemistry
Chemistry
shallow junction
Nanotechnology
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