Application of Plasma-Doping (PLAD) Technique to Reduce Dark Current of CMOS Image Sensors
2007
Plasma doping (PLAD) was applied to reduce the dark current of CMOS image sensor (CIS), for the first time. PLAD was employed around shallow trench isolation (STI) to screen the defective sidewalls and edges of STI from the depletion region of photodiode. This technique can provide not only shallow but also conformal doping around the STI, making it a suitable doping technique for pinning purposes for CISs with sub-2-mum pixel pitch. The measured results show that temporal noise and dark signal deviation as well as dark level decrease
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
13
References
28
Citations
NaN
KQI