Selective growth of semiconducting single-wall carbon nanotubes using SiC as a catalyst

Abstract Semiconducting single-wall carbon nanotubes (s-SWCNTs) without metal impurities are highly desired for use in high-performance field effect transistors as a channel material. Here we use SiC nanoparticles as a catalyst to selectively grow s-SWCNTs. The Si atoms on the surface of the SiC nanoparticles are found to be depleted during thermal treatment, and carbon atoms are exposed, which leads to the formation of carbon nanocaps on the SiC nanoparticles. Under a hydrogen atmosphere, the chemically active metallic carbon caps are preferentially etched away so that high purity s-SWCNTs with a content of ∼95% without any residue metal impurities are obtained by the chemical vapor deposition of ethanol and can be used to fabricate high-performance thin film transistors.