The triangular pits eliminate of (1120) a -plane GaN growth by metal-orgamic chemical vapor deposition
2009
Nonpolar a -plane (1120) GaN has been grown on r -plane (1102) sapphire by metal-orgamic chemical vapor deposition. The crystal quality has been greatly improved by using the AlGaN multiple-quantum-well interlayers. The surface morphology and the crystal quality were investigated by high resolution X-ray diffraction and atomic force microscopy.The triangular pits were eliminated completely. The precession of the X-ray diffraction symmetric reflection peak full with width at half maximum of (1120) is 680″.
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