X-ray induced oxygen vacancies at the LaAlO3/SrTiO3 interface switch dimensionality of the mobile electron system

Oxygen deficient LaAlO3/SrTiO3 (OD-LAO/STO) heterostructures are characterised by a dichotomic electron system, in which mobile delocalized Ti t2g electrons co-exist with Ti eg ones localized at oxygen vacancies (VOs). Here, we explore OD-LAO/STO heterostructures, where the VOs are generated by X-ray irradiation at T = 12K. Secondary Ion Mass Spectrometry depth profiling of samples, irradiated in an 18O atmosphere to promote 16O to 18O isotope substitution, yields unambiguous evidence that the released oxygen atoms stay mobile even at such astoundingly low temperature, and the VOs left behind are confined within the LAO and top STO layers. We determine the fundamental k -resolved electronic structure characteristics of this system, including electron dispersions and Fermi surface of the mobile electron system, using resonant soft-X-ray ARPES. Despite the narrow interfacial localization, the X-ray generated VOs switch the dimensionality of the interfacial electrons from 2D, characteristic of the standard stoichiometric LAO/STO interface, to quasi-3D extending into STO over a depth of more than 5 nm.