A process for reducing the particle generation and particulate receiving a wafer support

Use of the method known per se comprising the following steps: - cleaning and / or degreasing a surface - generating a high vacuum, and - simultaneous vapor deposition on the surface with hard atoms and ion bombardment, wherein the solids atoms and ions are applied in a stoichiometric ratio to each other on the surface of and are selected such that they form a hard layer, for coating a wafer support for semiconductor production under clean-room conditions.