GM-CSF and IL-2 share common control mechanisms in response to costimulatory signals in T cells.

A holding strip is used to hold a semiconductor ingot during semiconductor wafer fabrication. The holding strip is formed from a semiconductor material, typically the same material used to form the ingot itself. The holding strip has a holding surface shaped to receive the ingot and at least one surface other than the holding surface, into which at least one notch is formed. The holding strip has a characteristic breaking strength that changes when a cut is formed through the holding surface and into the notch. In some embodiments, the notch has sides that are substantially parallel to each other, and in other embodiments, the notch has tapered sides. In alternative embodiments, the shape of the notch causes an abrupt change or a gradual change in the breaking strength of the holding strip as the cut penetrates into the notch. In either case, the notch can be shaped to cause a gradual change in breaking strength as the cut moves deeper into the notch.