Raman monitoring of ZnSe and ZnSxSe1−x nanocrystals formed in SiO2 by ion implantation

Abstract Structural and optical properties of SiO 2 (600 nm)/Si films successively implanted with two types of ions (Zn and Se) or three types of ions (Zn, Se and S) and afterwards annealed at 900 °C were investigated. RS, PL and TEM methods were used to characterize A 2 B 6 nanocrystals synthesized in SiO 2 matrix. The Raman spectra recorded using an excitation with two different laser lines (355 and 473 nm) have shown the formation of ZnSe nanocrystals after a double implantation of Zn and Se ions, while ZnS x Se 1−x nanoclusters have been synthesized after a triple implantation of Zn, Se and S ions. Based on Raman spectra recorded with blue and UV excitations, the possible sulfur content ( x  ≈ 0.4) has been estimated for synthesized ternary alloy. The intensive PL bands for SiO 2 films implanted with (Zn, Se, S) and (Zn, Se) were detected in the blue and red spectral ranges, respectively.