A Back-Illuminated Voltage-Domain Global Shutter Pixel With Dual In-Pixel Storage

A 3.75- $\mu \text{m}$ back-illuminated voltage-domain global shutter (GS) pixel is presented. The 10T pixel architecture presented contains two independently operable storage branches and supports dual-capture, high-dynamic-range (HDR) imaging and correlated double sampling functionality. Electronic shielding of the sample diffusions by the vertical photodiode is utilized to reach native and differential parasitic light sensitivities below −73.5 and −82.5 dB at 940 nm, respectively. A GS HDR image capture mode with minimal motion artifacts is also demonstrated.