AU/ZNO-nanocomposite/(100)SI N-P heterojunction diodes for gas sensors

The development of n-ZnO-nanocomposite/p(100)Si n-p heterojunction diodes, their transport properties, and gas sensing capabilities are reported for the first time. The ZnO nanostructures are developed on p(100)Si substrates using polystyrene-acrylic acid diblock copolymers templates and CMOS compatible processing. ZnO is well established for gas sensors but for effective sensing the operational temperature of the sensor has to be increased to 300 degC, and usually responsivity is of the order of several minutes (>10mins).