Optical characterization of the silicon photodiodes for the establishment of national radiometric standards

Abstract Optical properties of the silicon photodiodes are investigated in the visible spectral regime. Non-linearity measurement standard was established by using Hamamatsu S1337-11 type windowless silicon photodiode whose non-linearity value was found to be better than 6×10 −5 at photocurrent level of 10 −9 to 10 −4 A . Temperature effects on the spectral responsivity for S1337-11, S1337-1010BQ and S1227-1010BQ type photodiodes were analyzed between 20°C and 40°C at 488.1, 514.7 and 632.8 nm vacuum wavelengths. The spatial uniformities of the responsivity for three type photodiodes are performed with a laser beam having 1 mm diameter by using home made two-axis micro translation system. Results of the reflectance measurements for three elements of reflection-based trap detectors were compared with the predicted values obtained from Fresnel equations.