Evaluation of 0.3.MU.m Poly-Silicon CMOS Circuits for Intelligent Power IC Application.

In this paper, we report on the fine device performance of a 0.3 µm gate length polysilicon complementary metal-oxide-semiconductor (CMOS). The breakdown voltage of 0.3 µm n-channel metal-oxide-semiconductor field effect transistor (NMOSFET) devices exceeds 6 V, which is higher than that of NMOSFET devices on separation by implanted oxygen (SIMOX) wafer. The drain current of a 10 µm channel width device is 540 µA, which is one-fifth of that of NMOSFET on SIMOX. The leakage current is less than 10-11 A/µm, when the gate voltage is below 0 V. The S-factor is 125 mV/dec, and the threshold voltage is 0.4 V. Therefore the ON/OFF current ratio is greater than 107. A delay time of 1 ns is achieved in polysilicon NAND rings. Hence, it is ascertained that the polysilicon CMOS is applicable for the fabrication of control and protection circuits on power devices.