A new TDDB lifetime bi-model for eDRAM MIM capacitor with ZrO2 high-k dielectrics

A new TDDB lifetime bi-model on ZrO2 based capacitor is proposed as E-model for high field region (>2.7MV/cm) and power law model for low field region (<2.7MV/cm). The current conduction mechanism is identified as Poole-Frenkel tunneling. The mechanism of TDDB is explained as hole trapping enhanced ZrO2 breakdown in high field region and electron trapping dominated ZrO2 breakdown in low field region.