Performance Projections for a Reconfigurable Tunnel NanoFET

Theoretical performance projections of a reconfigurable tunnel (RT) field-effect transistor (FET) employing multiple parallel 1-D channels are given. The RT-nanoFET can be reconfigured on demand from p- to n-type and from low power (LP) to high performance (HP) operation. In LP mode, a subthreshold swing $S$ below 60 mV/dec is predicted for a current density per gate width up to 3 nA/ $\mu \text{m}$ . By changing the polarities of the program gates to HP mode the current density can be increased to more than 110 $\mu \text{A}/\mu \text{m}$ . Thus, LP/HP reconfigurability liberates the transistor from the necessity to deliver low $S$ up to very high current densities.