Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals

We investigate the use of photonic crystals for light extraction from high-brightness thin-film AlGaInP light-emitting diodes with different etch depths, lattice constants, and two types of lattices (hexagonal and Archimedean). Both simulations and experimental results show that the extraction of high order modes with a low effective index neff is most efficient. The highest external quantum efficiency without encapsulation is 19% with an Archimedean A7 lattice with reciprocal lattice constant G=1.5k0, which is 47% better than an unstructured reference device.