Magnetoresistance of structures with MnAs layers and A 3 B 5 semiconductors heavily doped with manganese
2009
The magnetotransport properties of epitaxial ferromagnet/semiconductor heterostructures based on MnAs and GaMnAs ferromagnetic layers, separated by a nonmagnetic semiconductor layer (InAs or GaAs), have been investigated. Structures were obtained by combination of laser deposition and metal-organic chemical vapor deposition. A spin-valve effect was observed in magnetoresistance measurements. This fact suggests spin-polarized transport of carriers between ferromagnetic layers.
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