CMOS Compatible Catalyst Growth and Integration of Si Nanowires

We present a study on the CVD catalyzed growth of Si NWs using a fully compatible CMOS process with a silicide as a catalyst and silane as precursor gas. Experimental parameters such as growth temperature, SiH4 partial pressure, and substrate orientation were investigated. We demonstrate that the growth proceeds via a Vapor-SolidSolid mechanism. TEM and EDX experiments show that the catalyst, remains in a solid phase with either PtSi and Pt2Si phases. We will then discuss the incorporation of Pt in Si NW and the origin of the tapering effect observed. We show that adjusting the growth parameters, mainly SiH4 partial pressure and growth temperature, allows promoting some growth orientation.