Self-driving two-dimensional molybdenum(IV) telluride homotype heterojunction near infrared electric detector and preparation method thereof

The invention discloses a self-driving two-dimensional molybdenum(IV) telluride homotype heterojunction near infrared electric detector and preparation method thereof. The detector is characterized in that a bottom electrode in ohmic contact with the N type semiconductor substrate is arranged on the lower surface of an N type semiconductor substrate, the upper surface is covered by a mask layer which is made of insulating materials, a through hole is reserved in the center of the mask layer, a two-dimensional molybdenum(IV) telluride film is deposited in the through hole and is contacted with the N type semiconductor substrate to form an N-N homotype heterojunction, and the upper surface of the molybdenum(IV) telluride film is provided with a top electrode in ohmic contact with the molybdenum(IV) telluride. The near infrared electric detector is simple in preparation process, mature and reliable in technology, easy to control, and the obtained device has excellent performances of high sensitivity, high speed, high detectability, and self-driving.