High power 1120 nm-diode lasers with highly strained InGaAs QWs

Summary form only given. Diode lasers in the wavelength range at and beyond 1100 nm are interesting for pumping up-conversion fiber lasers and as sources for Raman amplifiers in telecommunication. There are several approaches to realize such diode lasers on GaAs. At wavelengths above 1200 nm InGaAs Q-dots and GaInNAs QW have achieved results which are comparable or better than InP-based devices. However below 1200 nm highly strained InGaAs seems to be the best approach.We studied diode lasers with a structure based on a GaAs waveguide and an AlGaAs (x = 0.25) waveguide grown by MOVPE. We have demonstrated record-high output powers for diode lasers in the wavelength range at 1120 nm with excellent wall plug efficiencies and high temperature stability.