Studying the wettability of Si and eutectic Si-Zr alloy on carbon and silicon carbide by sessile drop experiments

Abstract The contact angles of two different systems, molten silicon and a eutectic Si-8 at. pct Zr alloy and their evolution over timeon vitreous carbon and polycrystalline silicon carbide (SiC) substrates were investigated at 1500°C under vacuum, as well as in argon using the sessile drop technique. The contact angle and microstructure of the liquid droplet/solid substrate interface were studied to understand fundamental features of reactive wetting as it pertains to the infiltration process of silicon and silicon alloys into carbon or C/SiC preforms. Both pure Si and theeutectic alloy showed good wettability onvitreous carbon and SiC characterized by equilibrium contact angles between 29° and 39°. Theeutectic alloy showed a higher initial contact angle and slower spreading as compared to that of pure Si. On vitreous carbon bothsilicon and the eutecticalloy formed SiC at the interface, while no reaction was observed on the SiC substrates.