Formation of Pb0.6Sr0.4(Ti0.97Mg0.03)O2.97 thin films on assembled bottom electrodes with titanium silicide nanowires

Abstract Multi-layered bottom electrodes constituted by conductive Ti 5 Si 3 thin films with and without TiSi nanowires were prepared on glass substrates by Atmosphere Pressure Chemical Vapor Deposition (APCVD) method. Pb 0.6 Sr 0.4 (Ti 0.97 Mg 0.03 )O 2.97 (PST) thin films were deposited on the Ti–Si bottom electrodes by Radio-frequency Magnetron Sputtering Method. The morphology and phase structure of the PST thin films were observed and identified by FE-SEM and XRD, respectively. The dielectric properties of the PST thin films deposited on Ti–Si substrates were measured by Agilent 4294A Impedance Analyzer. Results show that the formation ability of the PST thin films can be reinforced by increasing crystallinity of Ti 5 Si 3 thin films and increasing amount of TiSi nanowires. The preparation temperature of the PST thin films deposited on Ti 5 Si 3 and TiSi-nanowire/Ti 5 Si 3 bottom electrodes decreases by 75 °C and 98 °C, respectively, compared with the situation on ITO/glass substrate. The permittivity of the PST thin films deposited on TiSi-nanowire/Ti 5 Si 3 bottom electrode is about 4 times higher than that deposited on ITO. The lowest dielectric loss of PST/TiSi-nanowire/Ti 5 Si 3 thin films is 5 Si 3 thin films. The tunability of the PST thin films is about 2.5 times higher on TiSi-nanowire/Ti 5 Si 3 bottom electrode than that on ITO bottom electrode.