High-voltage parallel writing on iron nitride thin films

We report large area patterning of sputter-deposited FeN thin films by a high-voltage parallel writing technique that was recently developed to modify ZrN surfaces. Systematically patterned 15–100-nm-thick FeN films consisting of features with well-defined sizes and shapes are obtained by applying high dc voltages between a stamp and the samples. During the process the oxide dissolves, exposing the substrate beneath. This controlled breakdown eliminates the need for any postexposure etching. The single-step imprinting method presented here provides an emerging route to fabricate isolated FeN geometrical structures on silicon substrates for magnetic applications.