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Growth of low basal plane dislocation density epilayers of 4H-silicon carbide for stable bipolar diodes
Growth of low basal plane dislocation density epilayers of 4H-silicon carbide for stable bipolar diodes
2005
Ze-Hong Zhang
Keywords:
Electronic engineering
High voltage
Silicon carbide
Dislocation
Epitaxy
Composite material
Materials science
Diode
Correction
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