A semiconductor device using the Soi substrate and soi substrate

Than silicon forming the semiconductor layer, forming a substrate by excellent material, such as SiC mechanical properties, bonded to the said substrate and the semiconductor layer through the insulating layer. After bonding, while creating an SOI substrate mechanically disconnects the semiconductor layer from the substrate, reusing semiconductor layer that is isolated to create the next SOI substrate. Thus, it was possible to obtain a large-sized SOI substrate having which was difficult in the above diameter 400mm size by conventional techniques.