Radially biased photoresistors with heteroepitaxial CdxHg1−xTe structure

We study the properties and parameters of compact photoresistor sensors with radial contacts made from CdxHg1−xTe (x≈0.212) heteroepitaxial structures with graded-base contacts. For a bias voltage corresponding to a voltage sensitivity of 1.5×105  V/W and a planar field of view of 14°, the maximum power output was 0.5 μW per element, while the minimum specific detection capability is 1.2×1011  cm⋅Hz1/2/W. The photoresistor design and resulting photoelectric parameters of the photoresistors enable us to produce focal-plane photoresistor arrays with pixel counts of the order of 106 and use multiplexers for image signal processing.