New design of Zero Bias Power Limiter Based on Schottky and PIN Diodes

In this paper, a new broadband microwave microstrip power limiter is designed and validated. The power limiter is based on microstrip technology integrating Schottky diodes and PIN diodes. Schottky diodes are used as detector diodes in order to generate DC current needed to bias PIN diode. The power limiter is optimized and validated using ADS software from Agilent technologies. The first circuit uses two single Schottky diodes and one PIN diode. In order to improve and simplify the first circuit, the second circuit is obtained by using a common anode Schottky diode. The third circuit is obtained by cascading two limiter stages of the second circuit. Simulation of circuits shows a limiting rate between 18 and 24 dB with a threshold input power level of 0 dBm until a maximum input power level of 30 dBm.