High-performance, reliable, 730 nm-emitting Al-free active region diode lasers

Compressively-strained InGaAsP QW active (/spl lambda/=732 nm) diode lasers achieve 2.4 W CW front-facet power from 100 /spl mu/m-wide apertures, with reliable operation at 0.5 W CW. Record-high characteristic temperatures for the threshold current and the differential quantum efficiency, T/sub 0/=115 K and T/sub 1/=285 K are obtained by growing on misoriented substrates.