Crystal growth and electrical resistivity in magnetic fields in single crystalline Nd2−x Ce x CuO4−δ

High quality single crystals of Nd2−x Ce x CuO4−δ (x≈0.15) were grown by the traveling solvent floating zone (TSFZ) method. A large single crystal grain of several centimeters in length and about 5 mm in diameter was obtained. After annealing in argon gas flow, the crystals exhibited bulk superconductivity below 19.1 K. The c-axis electrical resistivity in magnetic fields up to 6 T was measured. Significant broadening behavior of the resistive transition was found, when the magnetic field was applied along c-axis. The negative magnetoresistance as well as the broadening is presented.