Quantum well device having ESD strength and method of producing the device

AlGaInP quantum well (30) having a resistance to electrostatic discharge, which has an active layer with the electrostatic discharge strength, wherein the active layer has an n number of alternately stacked AlGaInP quantum well layers (42) and n AlGaInP barrier layers (44) wherein n is a positive integer, and wherein the AlGaInP quantum well layers (42) n-type dopant are provided with a doped, while the AlGaInP barrier layers (44) are undoped and wherein the n-type dopant Te, Se or Si comprises and the concentration of the n-type impurity between 5 × 10