Method for annealing silicon carbide wafer

The invention relates to a method for annealing a silicon carbide wafer. The method comprises the following steps of: putting a silicon carbide wafer which is subjected to primary machining into an annealing furnace; in the presence of an inert gas or a reduction gas, slowly rising the temperature for 1-8 hours (preferably 3-6 hours) till the annealing temperature is 1,200-1,800 DEG C (preferably 1,300-1,500 DEG C); constantly keeping the temperature at the annealing temperature for 0.1-5 hours (preferably 2-3 hours); and subsequently slowly cooling down for 1-10 hours (preferably 3-7 hours) to be at the room temperature. By annealing a SiC wafer, compared with the annealing process of a SiC wafer ingot, the method has the advantages of low annealing temperature, short time and easiness in realization in the production process. Through the annealing treatment, the residual stress in the SiC wafer is remarkably decreased, the defects are reduced, and the crystal quality of the SiC wafer is improved.