SIMS study of the concentration of dopants in LPCVD silicon thin films

Abstract Measurements of solid phase dopant concentration ( S ) of LPCVD Si thin films as a function of substrate temperature ( T s = 500−640 ° C) and gas phase doping ratio ( R = 1 × 10 −5 −4 × 10 −2 ) by SIMS indicate different behaviors of P and B in the films. A linear relation S = b ( T ) R is observed for B-doped film with b ( T ) varying from 4 to 50 depending on T s . Boron-doped microcrystalline film has a higher doping efficiency than that of P-doped ones.