GaInAs‐InP multiquantum well structures grown by metalorganic gas phase epitaxy with adducts

We report the first successful growth of GaInAs‐InP multiquantum well structures by metalorganic gas phase epitaxy with adducts in one single reactor. The properties of the two‐dimensional electron gas in these samples were studied in detail by photoluminescence measurements and Shubnikov–de Haas experiments.