DISCUSSION OF THE CONVERGENCE PROPERTIES OF THE PERTURBATION SERIES USED IN THE CALCULATION OF EBIC- AND CL-CONTRASTS

For the calculation of the contrast of a defect in semiconducting mate- rial, the defect is regarded as a bounded region where the minority carrier lifetime T' is lower than that (T) outside the defect region. The minority carrier density in the presence of the defect is normally written in terms of a perturbation series. The conditions for using a perturbation series for different kinds of defects are discussed.