Structural and ferroelectric properties of La modified Sr0.8Bi2.2Ta2O9 thin films

Abstract La modified SBT (Sr 0.8 La 0.1 Bi 2.1 Ta 2 O 9 ) thin films of different thickness were fabricated on Pt/Ti/SiO 2 /Si substrates by the metalorganic decomposition technique. All the films were annealed layer-by-layer at 800 °C using a rapid thermal annealing furnace. X-ray diffraction analysis indicated that the relative intensity of the (2 0 0) diffraction peak [ I (2 0 0)/ I (1 1 5)] increased with the increase of the film thickness. Eventually, an a -axis preferentially oriented SLBT film was obtained. These results are discussed with respect to the anisotropy of the grain growth. The a -axis preferentially oriented SLBT film, whose relative intensity of the (2 0 0) peak [ I (2 0 0)/ I (1 1 5)] was 1.05, had a remanent polarization (2 P r ) value of 21 μC/cm 2 and a coercive field (2 E c ) value of 70 kV/cm under the electric field of 200 kV/cm.