Azafullerene (C59N)2 thin-film field-effect transistors

Thin-film field-effect transistors (FETs) of azafullerene (C59N)2 are fabricated, and their properties are investigated. The (C59N)2 FET exhibits n-channel characteristics with the field-effect electron mobility of 3.8×10−4 cm2 V−1 s−1 and the on–off current ratio of 103 at room temperature. The observed differences are ascribed to the much smaller grain size and the worse crystallinity of (C59N)2 thin films, on a basis of low angle x-ray diffraction structural data. The anticipated dimer to monomer conversion with electron carrier injection is not observed. The FET characteristics are discussed from the temperature evolution of the mobilities between (C59N)2 and C60 FETs.