Conductance through zigzag quantum dots arrays

Abstract We fabricated quantum dots arrays on a GaAs/Al 0.3 Ga 0.7 As quantum well by using electron beam lithography and chemical wet etching, and studied their transport properties. We especially focused on geometrical dependence of conductance through quantum dots arrays. We measured I–V characteristics of samples with two different geometrical forms, which consisted of ten quantum dots in straight and zigzag forms. We also investigated a difference in transport properties between two types of samples, which are quantum dots arrays with and without Al-gate on top of the samples.