Gallium nitride on silicon
2001
In this paper we report on the development of GaN grown directly on standard Si wafers. Using a transition layer scheme, which addresses both the thermal expansion and lattice mismatch in this material system, excellent epitaxial film quality has been demonstrated, as evidenced by 2DEG electron mobilities. These films are grown by MOCVD on 4" Si substrates using a proprietary reactor design.
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