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Characterization of GaN layer using THz ellipsometry and its verification by cross-sectional observation
Characterization of GaN layer using THz ellipsometry and its verification by cross-sectional observation
2016
Kohei Tachi
Shiho Asagami
Takashi Fujii
Tsutomu Araki
Yasushi Nanishi
Takeshi Nagashima
Toshiyuki Iwamoto
Yukinori Sato
Naotake Morita
Ryuichi Sugie
Satoshi Kamiyama
Keywords:
Ellipsometry
Optics
Terahertz radiation
Analytical chemistry
Materials science
Optoelectronics
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