Sizeable enhancement of anti-weak localization effect in In2O3−x thin film caused by H2 gas mixing in N2 gas atmosphere on heat treatment

Abstract Through magneto-conductance measurements, we have observed sizeable enhancement of anti-weak localization (AWL) effect in In 2 O 3− x thin film ( 60 nm ) caused by H 2 gas mixing (10%) in N 2 gas (90%) atmosphere on the heat treatment (HT). In case of the HT in pure N 2 gas, the AWL effect is recognized, but is very small. With respect to those experimental results, we conclude that interstitial indium atoms in In 2 O 3− x are effectively generated and the AWL effect due to the spin–orbit interaction is come up.