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High power (>10W from 100 μm aperture) high reliability 808nm InAlgAs broad area laser diodes
High power (>10W from 100 μm aperture) high reliability 808nm InAlgAs broad area laser diodes
2006
R. M. Lammert
M. L. Osowski
S. Oh
C. Panja
J. E. Ungar
Keywords:
Optics
Laser
Diode
Aperture
Mathematics
Optoelectronics
Electronic engineering
Correction
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