Old Web
English
Sign In
Acemap
>
Paper
>
Time-dependent dielectric breakdown of atomic-layer-deposition Al 2 O 3 films on GaN
Time-dependent dielectric breakdown of atomic-layer-deposition Al 2 O 3 films on GaN
2017
Atsushi Hiraiwa
Toshio Sasaki
Satoshi Okubo
Daisuke Matsumura
Hiroshi Kawarada
Keywords:
Atomic physics
Dielectric strength
Atomic layer deposition
Materials science
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]