High and low voltage electron beam exposure of tricosanoic acid multilayers

Monomolecular resist films of tricosanoic acid prepared on top of thin Au- and Pt-films by the Langmuir-Blodgett technique have been exposed by high and low voltage electron beams. Up to now patterns have been obtained with a line width down to about 100 nm. For a 10-monolayer resist successful pattern transfer into an 80 nm Au-film has been demonstrated.