Positive photoresist removing liquid and manufacture of semiconductor device

PURPOSE: To easily remove a side wall protection deposit film and to protect a conductive layer against corrosion by a method wherein positive type photoresist is removed with a water solution which contains a compound selected from aromatic cyclic phenols and aromatic cyclic carboxylic acid and organic amine. CONSTITUTION: A CVD oxide film 2 is formed on an Si substrate 1, and a TiW layer 3, a CVD-NW layer 4, and an Al-Si-Cu layer 5 are formed thereon, a positive type photoresist 6 is applied thereon and exposed to light for the formation of a resist mask. A water solution which contains aromatic cyclic phenol or preferably 2, 3-pyridine diol, aromatic cyclic carboxylic acid or preferably p-toluic acid, organic amine, and preferably tetramethyl ammonium hydroxide is used as positive photoresist, removing solution. The removing solution is excellent to remove a positive type photoresist, side wall protecting deposit film and high in after-corrosion preventing properties, so that it hardly corrodes wiring material. COPYRIGHT: (C)1993,JPO&Japio