Properties of the HgCdTe linear-mode e-APD

The band structure of Hg 1−x Cd x Te results in an electron avalanche photodiode (e-APD) that exhibits single carrier, deterministic, noiseless gain. Data and analysis on 5µm cutoff, Hg 0.7 Cd 0.3 Te e-APD gated-imaging arrays with sub-photon sensitivity will be presented.