A 2-Stage GaN IMFET Power Amplifier in an Embedded Heat Slug Laminate

This paper describes a new high power high PAE high integration, 2-stage, S-band internally matched GaN HEMT FET power amplifier (IMFET PA) QPA2513 in an air-cavity laminate module. QPA2513 uses Qorvo’s high performance 50 V, 0.25 um, GaN-on-SiC process technology. Dimensions of the complete PA module are 25 mm x 12.5 mm x 3.488 mm. This PA delivers a typical 138 W pulsed power, 67.5 % Power added efficiency (PAE) and 31.5 dB compressed gain. It is the first reported 2-stage IMFET GaN PA in a laminate package.